Effect of GaN template thickness and morphology on AlxGa1-xN (0Identifieur interne : 000F12 ( Main/Repository ); précédent : 000F11; suivant : 000F13

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Effect of GaN template thickness and morphology on AlxGa1-xN (0Auteurs : RBID : Pascal:13-0251386

Descripteurs français

• Pascal (Inist)
  • Epaisseur, Croissance film, Méthode MOVPE, Silicium, Diffraction RX, Microscopie force atomique, Spectre RX, Spectrométrie dispersive, Nitrure de gallium, Semiconducteur, Nitrure d'aluminium, Composé ternaire, Nitrure d'indium, Ga N, GaN, Al Ga N, AlxGa1-xN, AlGaN, Si, Composé minéral.
• Wicri :
  • concept : Composé minéral.

English descriptors

• KwdEn :
  • Aluminium nitride, Atomic force microscopy, Dispersive spectrometry, Film growth, Gallium nitride, Indium nitride, Inorganic compounds, MOVPE method, Semiconductor materials, Silicon, Ternary compounds, Thickness, X-ray spectra, XRD.

Abstract

We have grown Al_xGa_1-xN/GaN (00.07Ga_0.93N samples grown on different GaN templates have been studied. The HRXD and the AFM results show a better film quality when the AlGaN layer is grown on a 1.3 μm-thick 2D GaN template. It is possible to control the stress in the layers. The crystalline quality is also showed to degrade with Al solid content increase.

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Links toward previous steps (curation, corpus...)

• to stream Main, to step Corpus: 000984

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Pascal:13-0251386

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Le document en format XML

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Ga

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<div type="abstract" xml:lang="en">We have grown Al

<sub>x</sub>

Ga

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N/GaN (0<sub>0.07</sub>

Ga

<sub>0.93</sub>

N samples grown on different GaN templates have been studied. The HRXD and the AFM results show a better film quality when the AlGaN layer is grown on a 1.3 μm-thick 2D GaN template. It is possible to control the stress in the layers. The crystalline quality is also showed to degrade with Al solid content increase.</div>

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Ga

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<s0>We have grown Al

<sub>x</sub>

Ga

<sub>1-x</sub>

N/GaN (0<sub>0.07</sub>

Ga

<sub>0.93</sub>

N samples grown on different GaN templates have been studied. The HRXD and the AFM results show a better film quality when the AlGaN layer is grown on a 1.3 μm-thick 2D GaN template. It is possible to control the stress in the layers. The crystalline quality is also showed to degrade with Al solid content increase.</s0>

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<s5>32</s5>

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<s5>33</s5>

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<s5>34</s5>

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